AMD Introduces Industry's Fastest Burst Mode Flash Memory Device for
Cellular ApplicationsAMD Introduces Industry's Fastest Burst Mode Flash Memory Device for
Cellular ApplicationsNovember 8, 2001
AMD (NYSE:AMD) today announced its most advanced 1.8 volt, 64 Megabit Flash memory device specifically designed to address the demanding needs of the cellular market. This sophisticated device combines a high performance burst mode interface with innovative power management technologies and delivers industry-leading power and performance characteristics. Operating at speeds up to 66MHz, these products are ideal for next-generation cellular phone applications that include innovations such as Internet connectivity, PDA functionality, audio and video streaming.
The Am29BDS643 features AMD's Simultaneous Read/Write architecture and offers an exceptionally fast burst access time of 11 nanoseconds. The high speed burst mode capability allows microprocessors to operate at optimal performance levels by significantly reducing the number of wait states required to read code and data from the flash. This enables increased overall system performance.
"AMD Flash continues to enable innovations in the cellular market by delivering the extremely high data transfer rates needed for the next generation of cellular phones," said Kevin Plouse, vice president of technical marketing and business development for AMD's Memory Group. "Our high performance Flash memory with advanced packaging and power management techniques enables our customers to provide the most advanced cellular solutions in the market."
The device uses AMD's Super Low Voltage technology, which provides single 1.8 volt read, program, and erase capability. AMD was the first to offer 1.8 volt flash memory devices, enabled by AMD's patented negative gate erase architecture. Like all of AMD's low voltage Flash memory devices, the Am29BDS643 automatically enters into a power-saving "sleep mode" while not in use. When it is next needed the device returns instantaneously to an active state. To further reduce power consumption the Am29BDS643 uses an innovative power saving pin. This pin limits the number of power- consuming switching operations during read to help maximize the system's battery life.
Features and Packaging
AMD's Am29BDS643 offers high performance 11 nanosecond burst mode read, 55 nanosecond asynchronous read, and supports 66 MHz microprocessors. It is a 1.8 volt-only, x16, 64 Megabit Flash memory device manufactured on AMD's advanced 0.17-micron process technology.
The device offers true hardware simultaneous read/write with flexible bank architecture, which enables storage of code and data on the same device. The Am29BDS643 has four 16Mb banks. The system is able to simultaneously program and erase in one bank while reading data from any one of the other banks. As a result, system designers can combine the functionality of several memory devices into one and reduce component costs.
In order to effectively support stringent printed circuit board requirements, AMD has packaged these products in a 0.5 mm Fine pitch Ball Grid Array (FBGA) and has multiplexed the address and data pins to minimize the input/output pin count. The reduced pin configuration combined with AMD's state-of-the-art packaging technology allows for easier board routing, and conserves board space, thereby enabling lower overall system costs.
The Am29BDS643 offers 20 years of data retention at 125(Degree)C and a minimum of 1 million program and erase cycles per sector.
Price and Availability
The Am29BDS643 is available now and is priced at $19.50 in 10,000 piece quantities.
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